K4M56323PG-FE datasheet, sdram equivalent, Samsung semiconductor

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Features and benefits

* 1.8V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3.

Application

ORDERING INFORMATION Part No. K4M56323PG-F(H)E/G/C/F75 K4M56323PG-F(H)E/G/C/F90 Max Freq. 133MHz(CL=3), 83MHz(CL2) 111.

Description

The K4M56323PG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system .

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